to-126 plastic-encapsulate transistors b772 transistor (pn p ) features low speed switching maximum maximum maximum maximum ratings ratings ratings ratings (t (t (t (t a a a a =25 =25 =25 =25 unless unless unless unless otherwise otherwise otherwise otherwise noted) noted) noted) noted) symbol symbol symbol symbol parameter parameter parameter parameter value value value value units units units units v v v v cbo cbo cbo cbo collector-base voltage - 40 v v v v v ceo ceo ceo ceo collector-emitter voltage - 30 v v v v v ebo ebo ebo ebo emitter-base voltage - 6 v i i i i c c c c collector current -continuous - 3 a p p p p d d d d collector power dissipation 1.25 w t t t t j j j j junction temperature 150 t t t t stg stg stg stg storage temperature -55-150 electrical electrical electrical electrical characteristics characteristics characteristics characteristics (tamb=25 (tamb=25 (tamb=25 (tamb=25 unless unless unless unless otherwise otherwise otherwise otherwise specified) specified) specified) specified) parameter parameter parameter parameter symbol test conditions min typ max unit collector-base collector-base collector-base collector-base breakdown breakdown breakdown breakdown voltage voltage voltage voltage v(br) cbo i c = 100 a, i e =0 - 40 v collector-emitter collector-emitter collector-emitter collector-emitter breakdown breakdown breakdown breakdown voltage voltage voltage voltage v(br) ceo i c = 10ma, i b =0 - 30 v emitter-base emitter-base emitter-base emitter-base breakdown breakdown breakdown breakdown voltage voltage voltage voltage v(br) ebo i e = 100 a, i c =0 -6 v collector collector collector collector cut-off cut-off cut-off cut-off current current current current i cbo v cb = 40 v, i e =0 - 1 a collector collector collector collector cut-off cut-off cut-off cut-off current current current current i ceo v ce = 30 v, i b =0 - 10 a emitter emitter emitter emitter cut-off cut-off cut-off cut-off current current current current i ebo v eb = 6 v, i c =0 - 1 a dc dc dc dc current current current current gain gain gain gain h fe v ce = 2 v, i c = 1a 60 400 collector-emitter collector-emitter collector-emitter collector-emitter saturation saturation saturation saturation voltage voltage voltage voltage v ce (sat) i c = 2a, i b = 0.2 a - 0.5 v base-emitter base-emitter base-emitter base-emitter saturation saturation saturation saturation voltage voltage voltage voltage v be (sat) i c = 2a, i b = 0.2 a - 1.5 v transition transition transition transition frequency frequency frequency frequency f t v ce = 5v, i c =0.1a f =10mhz 90 mhz classification classification classification classification of of of of h h h h fe fe fe fe rank rank rank rank r o y gr range range range range 60-120 100-200 160-320 200-400 to-126 to-126 to-126 to-126 1. emitter 2. collector 3. base 1 2 3 product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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